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| mnt - LB32N16 mnt - lb32n20 tentative 6/99 magnatec. telephone +44(0)1455 554711. fax +44(0)1455 558843. e-mail: magnatec@semelab.co.uk website: http://www.semelab.co.uk v dsx drain C source voltage v gss gate C source voltage i d continuous drain current i d(pk) body drain diode p d total power dissipation @ t case = 25c t stg storage temperature range t j maximum operating junction temperature r q jc thermal resistance junction C case 14v 32a 32a 500w C55 to 150c 150c 0.3c/w mechanical data dimensions in mm 10.0 14.0 43.5 0.8 7.0 28.5 ?4.25 10.5 24.0 typ 6.35 10.0 typ 57.0 smartpack power module features ? n - channel power mosfets ? high speed switching ? semefab designed and diffused ? high voltage (160v & 200v) ? high energy rating ? enhancement mode ? integral protection diode ? p - channel available absolute maximum ratings (t case = 25c unless otherwise stated) power mosfets for audio applications LB32N16 160v lb32n20 200v case 2
c iss input capacitance c oss output capacitance c rss reverse transfer capacitance t on turnCon time t off turn-off time mnt - LB32N16 mnt - lb32n20 tentative 6/99 magnatec. telephone +44(0)1455 554711. fax +44(0)1455 558843. e-mail: magnatec@semelab.co.uk website: http://www.semelab.co.uk characteristic test conditions min. typ. max. unit bv dsx drain C source breakdown voltage bv gss gate C source breakdown voltage v gs(off) gate C source cutCoff voltage v ds(sat) * drain C source saturation voltage i dsx drain C source cutCoff current yfs* forward transfer admittance 160 200 14 0.1 1.5 12 10 10 26 * pulse test: pulse width = 300 m s , duty cycle 2%. v gs = C10v LB32N16 i d = 10ma lb32n20 v ds = 0 i g = 100 m a v ds = 10v i d = 100ma v gs = 10v i d = 32a v ds = 160v LB32N16 v gs = C10v v ds = 200v lb32n20 v ds = 10v i d = 5a v v v v ma s characteristic test conditions typ unit n-ch tbe tbe tbe tbe tbe v ds = 10v f = 1mhz v ds = 20v i d = 7a pf ns static characteristics (t case = 25c unless otherwise stated) dynamic characteristics (t case = 25c unless otherwise stated) gate 1 gate 2 source 2 source 1 drain 1 s2 g2 d g1 s1 |
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